sangdest microelectronics technical data green products data sheet n0685, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 30WQ04FN 30WQ04FN schottky rectifier applications: disk drives switching power supply converters free-wheeling diodes reverse battery protection battery charging features: popular dpak outline small foot print, surface mountable low forward voltage drop high frequency operation guard ring for enhanced ruggedness and long term re liability green products in compliance with the rohs directiv e this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in mm dpak
sangdest microelectronics technical data green products data sheet n0685, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 30WQ04FN marking diagram: where xxxxx is yywwl 30WQ04FN = part name ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping 30WQ04FN dpak (pb-free) 2500 pcs / reel for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 40 v average forward current* (per device) i f(av) 50% duty cycle @t c = 135c, rectangular wave form 3.5 a peak one cycle non- repetitive surge current i fsm 8.3 ms, half sine pulse 96 a
sangdest microelectronics technical data green products data sheet n0685, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 30WQ04FN electrical characteristics: characteristics symbol condition max. units v f1 @ 3a, pulse, t j = 25 c @ 6a, pulse, t j = 25 c 0.53 0.67 v forward voltage drop* v f2 @ 3a, pulse, t j = 125 c @ 6a, pulse, t j = 125 c 0.49 0.62 v reverse current * i r1 @v r = rated v r t j = 25 c 2.00 ma i r2 @v r = rated v r t j = 125 c 24 ma junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz 189 pf typical series inductance (per leg) l s measured lead to lead 5 mm from package body 5.0 nh max. voltage rate of change dv/dt - 10,000 v/ m s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units junction temperature t j - -40 to +150 c storage temperature t stg - -40 to +150 c maximum thermal resistance junction to case (per leg) r q jc dc operation 4.7 c/w approximate weight wt - 0.39 g case style dpak
sangdest microelectronics technical data green products data sheet n0685, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 30WQ04FN
sangdest microelectronics technical data green products data sheet n0685, rev. - weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn 30WQ04FN disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchaser s are advised to contact the smc - sangdest microel ectronics (nanjing) co., ltd sales department for the latest version of the data sheet(s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other a rrangement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users unit s according to the datasheet(s). smc - sangdest mic roelectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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